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The
Johnson research group studies the mechanics of electronic and optical
materials at the nanometer and micrometer scale. We refer this area as nano-electro-opto
mechanics, or NEO-mechanics.
Our work
has applications in many emerging technologies, including photovoltaics,
micro- and nanoelectronics, lasers and photonics, and micro- and
nanomechanical systems (MEMS & NEMS).
We are interested in the effects of deformation, disorder, and
defects in these systems, which lead to coupled or multiphysics behavior.
We
use atomistic and continuum modeling methods to simulate real systems to
help design and interpret experiments.
Recent Archival
Journal Publications:
(To
obtain copies of any of these articles please contact Prof. Johnson.)
2009
X. Zhang, M. Gharbi, P. Sharma, and H. T. Johnson,
“Quantum field induced strains in nanostructures and prospects for optical
actuation,” International Journal of
Solids and Structures, 46,
3810-3824 (2009).
D. Krishnan and H. T. Johnson, “Optical properties of
two-dimensional polymer photonic crystals after deformation-induced pattern
transformations,” Journal of the
Mechanics and Physics of Solids 57,
1500-1513 (2009).
Jeong Ho You and
H. T. Johnson, “Effect of Dislocations on Electrical and Optical Properties
in GaAs and GaN,” in Solid State
Physics, 61, eds. H.
Ehrenreich and F. Spaepen, pp. 143-261, Elsevier, (2009). [extended review,
invited]
S. Kibey, L.-L. Wang, J.-B. Liu, H. T. Johnson, H.
Sehitoglu, and D. D. Johnson, “Quantitative prediction of twinning stresses
in FCC alloys: application to Cu-Al,” Physical
Review B 79, 214202 (2009).
N. Kalyanasundaram, J. B. Freund, and H. T. Johnson,
“Multiscale crater function model for ion-induced pattern formation in
silicon,” Journal of Physics:
Condensed Matter, 21, 224018
(2009). [invited]
M. Z. Hossain, J.
B. Freund, and H. T. Johnson, “Improved calculation of Si sputter yield via
first principles derived interatomic potential,” Nuclear Instruments and Methods in Physics Research B 267, 1061-1066 (2009).
2008
M. Ghazisaeidi, J. B. Freund, and H. T. Johnson,
“Statistical characterization of surface defects created by Ar ion
bombardment of crystalline silicon,” Journal of Applied Physics, 104,
054304 (2008).
Daniel Shir,
Hongwei Liao, Seokwoo Jeon, Dong Xiao, Harley T. Johnson, Gregory R.
Bogart, Katherine H. A. Bogart, and John A. Rogers, “Three-dimensional
nanostructures formed by single step, two-photon exposures through
elastomeric penrose quasicrystal phase masks,” Nano Letters,
8, 2236-2244 (2008).
W. R. Frei, H. T.
Johnson, and D. A. Tortorelli, “Optimization of
photonic nanostructures,”
Computer Methods in Applied Mechanics and Engineering, 197,
3410-3416 (2008). [invited]
Jeong Ho You,
Jun-Qiang Lu, and H. T. Johnson, “Atomistically informed
electrostatic model of an edge dislocation in a complex crystalline
material,” Mathematics and Mechanics of Solids,
13, 267-291 (2008). [invited]
D. Xiao and H. T.
Johnson, “Approximate cloaking effect in an
axisymmetric silicon photonic crystal structure,”
Optics Letters, 33, 860-862 (2008).
N.
Kalyanasundaram, M. Ghazisaeidi, J. B. Freund, and H. T. Johnson, “Single
impact crater functions for ion bombardment of silicon,”
Applied Physics Letters, 92, 131909 (2008).
M. Zubaer
Hossain, Jonathan B. Freund, and H. T. Johnson, “Differential
sputter yields in Si1-xGex,”
Journal of Applied Physics, 103, 073508 (2008).
W. R. Frei, K. D.
Choquette, and H. T. Johnson, "Optimization of a single defect
photonic crystal laser cavity," Journal of Applied Physics, 103,
033102 (2008).
N.
Kalyanasundaram, M. C. Wood, J. B. Freund, and H. T. Johnson, “Stress
evolution to steady state in ion-bombardment of silicon,”
Mechanics Research Communications, 35, 50-56 (2008).
[invited]
2007
Jeong
Ho You and H. T. Johnson, “Effect of threading edge dislocations on
the photoluminescence spectrum in n-type wurtzite GaN,”
Physical Review B, 76, 115336 (2007).
H.
Jiang, M.-F. Yu, J.-Q. Lu, Y. Huang, H.T. Johnson, X.-G. Zhang, and P.
Ferreira, “Carbon nanotube electronic displacement
encoder with sub-nanometer resolution,” Journal of
Computational and Theoretical Nanoscience, 4, 574-577 (2007).
[cover article]
X.
Zhang, P. Sharma, and H. T. Johnson, “Quantum
confinement induced strain in quantum dots,” Physical
Review B, 75, 155319 (2007).
Jeong
Ho You and H. T. Johnson, “Effect of screw dislocation density on
optical properties in n-type wurtzite GaN,” Journal of
Applied Physics, 101, 023516 (2007).
W. R. Frei, D. A. Tortorelli, and H. T. Johnson, “A
geometry projection method for optimizing photonic nanostructures,” Optics
Letters, 32, 77-79 (2007).
2006
Yun-Ju
Lee, Carla E. Heitzmann, Walter R. Frei, H. T. Johnson, and Paul V. Braun,
“Transformation of hydrogel-based inverse opal photonic sensors from FCC to
L11 during swelling,” Journal of Physical Chemistry B, 110,
19300-19306 (2006).
Jeong Ho
You, Jun-Qiang Lu and H. T. Johnson, “Electron scattering due to threading
edge dislocations in epitaxial wurzite GaN,” Journal of Applied Physics,
99, 033706 (2006).
Jun-Qiang Lu, H. T. Johnson, V. D. Dasika, and R. S.
Goldman, “Moments-based tight-binding analysis of local electronic
structure in InAs/GaAs quantum dots for comparison to experimental
measurements,” Applied Physics Letters, 88, 053109 (2006).
N.
Kalyanasundaram, M. C. Moore, J. B. Freund, and H. T. Johnson, “Stress
evolution due to medium-energy ion bombardment of silicon,” Acta
Materialia, 54, 483-491 (2006).
2005
N. Kalyanasundaram, J. B. Freund, and H. T. Johnson,
“Atomistic determination of continuum mechanical properties in
ion-bombarded silicon,” Journal of Engineering Materials and Technology
(ASME Transactions), 127, 457-461 (2005). [invited]
Jun-Qiang Lu, Jian Wu, Wenhui Duan, Bing-Lin Gu, and
H. T. Johnson, “Structural trends interpretation of the
metal-to-semiconductor transition in deformed carbon nanotubes,” Journal
of Applied Physics, 97, 114314 (2005).
Adam D. Schuyler, G. S. Chirikjian, Jun-Qiang Lu, and
H. T. Johnson, “Random-walk statistics in moment-based order(N)
tight-binding and applications in carbon nanotubes,” Physical Review E,
71, 046701 (2005).
W. R. Frei, D. Tortorelli, and H. T. Johnson,
“Topology optimization of a photonic crystal waveguide termination to
maximize directional emission,” Applied Physics Letters, 86,
111114 (2005).
2004
W. R. Frei and H. T. Johnson, “Finite element
analysis of disorder effects in photonic crystals,” Physical Review B,
70, 165116, (2004).
M. C. Moore, N. Kalyanasundaram, J. B. Freund, and H.
T. Johnson, "Structural and sputtering effects of medium energy ion
bombardment of silicon," Nuclear Instruments and Methods in Physics
Research B, 225, 241-255, (2004).
Allison Y. Suh, Ning Yu, Ki Myung Lee, Andreas A.
Polycarpou, and H. T. Johnson, "Crystallite coalescence during film
growth based on improved contact mechanics adhesion models," Journal
of Applied Physics, 96, 1348-1359, (2004).
R. Bose and H. T. Johnson, “Coulomb interaction
energy in optical and quantum computing applications of self-assembled
quantum dots,” Microelectronic Engineering, 75 (1), 43-53,
(2004).
H. T. Johnson, B. Liu, and Y. Huang, "Electron
transport in deformed carbon nanotubes," Journal of Engineering
Materials and Technology (ASME Transactions) 126, 261-268,
(2004). [invited]
B. Liu, H. Jiang, H. T. Johnson, and Y. Huang, “The
influence of mechanical deformation on the electrical properties of single
wall carbon nanotubes,” Journal of the Mechanics and Physics of Solids,
52, 1-26, (2004).
2003 and earlier (selected)
H. T. Johnson and R. Bose, “Nanoindentation effect on
the optical properties of self-assembled quantum dots,” Journal of the
Mechanics and Physics of Solids, 51, 2085-2104, (2003).
[invited]
S. Zhang, H. T. Johnson, G. J. Wagner, W. K. Liu, and
K. J. Hsia, “Stress generation mechanisms in carbon thin films grown by
ion-beam deposition," Acta Materialia, 51, 5211-5222,
(2003).
H. T. Johnson, R. Bose, B. B. Goldberg, and H. D.
Robinson, “Simulation evidence for lateral excitation coupling in a
self-assembled quantum dot array,” Applied Physics Letters, 82,
3382-3384, (2003).
T. G. Bifano, H. T. Johnson, P. Bierden, R. Mali,
“Elimination of stress-induced curvature in thin-film structures,” Journal
of Microelectromechanical Systems, 11, 592-597, (2002).
H. T. Johnson, V. Nguyen, and A. F. Bower, “Simulated
self-assembly and optoelectronic properties of InAs/GaAs quantum dot
arrays,” Journal of Applied Physics, 92, 4653-4663, (2002).
H. T. Johnson and L. B. Freund, “The influence of
strain on confined electronic states in semiconductor quantum structures,” International
Journal of Solids and Structures, 38, 1045-1062, (2001).
[invited]
H. T. Johnson, L. B. Freund, C. D. Akyüz, and A.
Zaslavsky, “Finite element analysis of strain effects on electronic and transport
properties in quantum dots and wires,” Journal of Applied Physics 84,
3714-3725, (1998).
H. T. Johnson and L. B. Freund, “Mechanics of
coherent and dislocated island morphologies in strained epitaxial material
systems,” Journal of Applied Physics 81, 6081-6090, (1997).
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